? semiconductor components industries, llc, 2015 august, 2015 ? rev. 0 1 publication order number: MBRS360P/d MBRS360P surface mount schottky power rectifier this device employs the schottky barrier principle in a large area metal?to?silicon power diode. state?of?the?art geometry features epitaxial construction with oxide passivation and metal overlay contact. ideal ly suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the system. features ? small compact surface mountable package with j?bend leads ? rectangular package for automated handling ? highly stable oxide passivated junction ? excellent ability to withstand reverse avalanche energy transients ? guard?ring for stress protection ? these are pb?free devices mechanical characteristics ? case: epoxy, molded, epoxy meets ul 94 v?0 ? weight: 217 mg (approximately) ? finish: all external surfaces corrosion resistant and terminal leads are readily solderable ? lead and mounting surface temperature for soldering purposes: 260 c max. for 10 seconds ? cathode polarity band ? device meets msl 1 requirements ? esd ratings: ? machine model, c ? human body model, 3b device package shipping ? ordering information schottky barrier rectifiers 3.0 amperes, 60 volts www. onsemi.com ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification brochure, brd8011/d. MBRS360Pt3g smc (pb?free) b36 = specific device code a = assembly location y = year ww = work week = pb?free package marking diagram 2,500 / tape & reel smc case 403ac ayww b36 (note: microdot may be in either location)
MBRS360P www. onsemi.com 2 maximum ratings rating symbol value unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 60 v average rectified forward current i f(av) 3.0 @ t l = 137 c 4.0 @ t l = 127 c a nonrepetitive peak surge current (surge applied at rated load conditions halfwave, single phase, 60 hz) i fsm 125 a storage temperature range t stg ? 65 to +175 c operating junction temperature (note 1) t j ? 65 to +175 c stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device function ality should not be assumed, damage may occur and reliability may be affected. 1. the heat generated must be less than the thermal conductivity from junction?to?ambient: dp d /dt j < 1/r ja . thermal characteristics characteristic symbol value unit thermal resistance, junction?to?lead (note 2) r jl 11 c/w thermal resistance, junction?to?ambient (note 2) r ja 136 c/w thermal resistance, junction?to?ambient (note 3) r ja 71 c/w electrical characteristics maximum instantaneous forward voltage (note 4) (i f = 3.0 a, t j = 25 c) v f 0.63 v maximum instantaneous reverse current (note 4) (rated dc voltage, t j = 25 c) (rated dc voltage, t j = 100 c) i r 0.03 3.0 ma product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions. 2. mounted with minimum recommended pad size, pc board fr4. 3. 1 inch square pad size (1 x 0.5 inch for each lead) on fr4 board. 4. pulse test: pulse width = 300 s, duty cycle 2.0%. v f , instantaneous forward voltage (v) figure 1. typical forward voltage figure 2. maximum forward voltage i f , instantaneous forward current (a) t j = 25 c t j = 150 c t j = 100 c t j = ?40 c v f , instantaneous forward voltage (v) t j = 25 c t j = 150 c t j = 100 c t j = ?40 c 0.01 0.1 1 10 0.0 0.2 0.4 0.6 0.8 t j = 175 c 0.01 0.1 1 10 0.0 0.2 0.4 0.6 0.8 i f , instantaneous forward current (a) t j = 175 c
MBRS360P www. onsemi.com 3 v r , instantaneous reverse voltage (v) figure 3. typical reverse current figure 4. maximum reverse current i r , instantaneous reverse current (a) t j = 25 c t j = 150 c t j = 100 c v r , instantaneous reverse voltage (v) i r , instantaneous reverse current (a) t j = 25 c t j = 150 c t j = 100 c 1.0e?07 1.0e?06 1.0e?05 1.0e?04 1.0e?03 1.0e?02 1.0e?01 1.0e+00 0 102030405060 t j = 175 c 1.0e?06 1.0e?05 1.0e?04 1.0e?03 1.0e?02 1.0e?01 1.0e+00 0 102030405060 t j = 175 c
MBRS360P www. onsemi.com 4 t l , lead temperature ( c) figure 5. current derating figure 6. forward power dissipation i f(av) , average forward current (a) 0 4 0123 i o , average forward current (a) 2.5 4.5 5 p fo , average power dissipation (w) square wave dc 0.5 1 1.5 2 3 4 r jl = 15 c/w 3.5 2.5 1.5 0.5 square wave dc figure 7. typical capacitance 1000 10 60 0102030 v r , reverse voltage (v) 100 40 50 70 c, capacitance (pf) t j = 25 c 3.5 t j = 175 c 0 1 2 3 4 5 0 20 40 60 80 100 120 140 160 180 test type > min pad 1 oz r jc = min pad 1 oz c/w p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 t, time (s) figure 8. thermal response, junction?to?ambient, smc package r(t), transient thermal response 100 1 0.1 0.2 d = 0.5 0.05 single pulse 0.1 0.00001 0.0001 0.001 0.01 1 100 1000 0.01 10 0.1 10
MBRS360P www. onsemi.com 5 package dimensions smc 2?lead case 403ac issue o dim a min max millimeters 1.95 2.65 a1 0.05 0.20 b 2.90 3.20 c 0.15 0.41 d 5.55 6.25 e 7.75 8.15 l 0.75 1.60 6.60 7.15 e1 *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. recommended e1 b d c l a1 a notes: 1. dimensioning and tolerancing per anme y14.5m, 1994. 2. controlling dimension: millimeters. 3. dimensions d and e1 do not include mold flash. mold flash shall not exceed 0.13 per side. 4. dimensions d and e1 to be determined at datum h. 5. dimension b shall be measured within the area de- termined by dimension l. top view side view end view dimensions: millimeters 2.25 8.75 2x e detail a detail a 3.79 2x soldering footprint* on semiconductor and the are registered trademarks of semiconductor components industries, llc (scillc) or its subsidia ries in the united states and/or other countries. scillc owns the rights to a number of pa tents, trademarks, copyrights, trade secret s, and other intellectual property. a listin g of scillc?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent?marking.pdf. scillc reserves the right to make changes without further notice to any product s herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any part icular purpose, nor does sci llc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typi cal? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating param eters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgic al implant into the body, or other applications intended to s upport or sustain life, or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer s hall indemnify and hold scillc and its officers , employees, subsidiaries, affiliates, and dist ributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufac ture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 MBRS360P/d literature fulfillment : literature distribution center for on semiconductor 19521 e. 32nd pkwy, aurora, colorado 80011 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative
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